Picture of ECR PECVD (T-CVD)
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This equipment is available to deposit SiOx : H, SiNx : H on substrates up to 150mm diameter with uniformity less than 5% for 1µm and with less hydrogen inside material layer.

T° between 100°C up to 450°C.

The second aim at longer is to deposit by plasma TiOx and TiN from liquid source of titanium.

Tool name:
ECR PECVD (T-CVD)
Area/room:
Traitements thermiques/thermal treament (B√Ęts F et
Category:
PECVD
Manufacturer:
Roth&Rau
Model:
AK400
Max booking time, day:
8 hours
Max booking time, night:
0 hours
No. of future bookings:

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