Picture of Four OXYBORE6 MOS Compatible (T-FOUR)
Current status:
Book | Log
Show/Collapse all

1st Responsible:
2nd Responsible:
You must be logged in to view files.

Four d'oxydation et redistribution 4 et 6 pouces pour plaquettes dopées P

Oxidation and redistribution furnace for P-doped 4 and 6 inches wafers

Tool name:
Four OXYBORE6 MOS Compatible (T-FOUR)
Traitements thermiques/thermal treament (B√Ęts F et
Centronic E1550HT
Max booking time, day:
12 hours
Max booking time, night:
0 hours
No. of future bookings:

Oxydation thermique sèche (O2) du silicium de 5nm à 200nm.

Oxydation thermique humide (H2O)  du silicium de 30 nm à 2,4 µm.

Température d'oxydation de 725°C à 1150°C.

Redistribution de dopants sous N2 de 700°C à 1150°C.

Silicon Dry oxidation (O2) between 5 nm and 200 nm

Silicon wet oxidation (H2O) between 30 nm and 2,4 µm.

Oxidation temperature from 725°C up to 1150°C.

Doping distribution temperature from 700°C up to 1150°C.



Licensed Users

You must be logged in to view tool modes.