Experimental layout optimization and process development is highly time consuming and cost intensive.
Calculation of the intensity image allows layout optimization (OPC), mask layout verification, optimization of process conditions (e.g. illumination, stack) and process window (e.g. gap or defocus and exposure dose variation) by varying the layout and/ or exposure parameters.
Thousands of experiments can be computed “overnight” without producing masks or “burning” wafers.
Once a good image contrast has been obtained, 3D resist development modeling allows further optimization of the resist profiles. Complex process effects such as lateral development, density dependent bias in electron-beam or in laser lithography can be analyzed and compensated.
Logiciel de simulation dse procédés de photolithographie.