Picture of Four OXYPHOS6 MOS Compatible (T-FOUR)
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Four d'oxydation et de redistribution 4 et 6 pouces pour plaquettes dopées N.

Oxidation and redstribution furnace 4 and 6 inches for N-doped wafers.

Tool name:
Four OXYPHOS6 MOS Compatible (T-FOUR)
Traitements thermiques/thermal treament (B√Ęts F et
Centronic E1550HT
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10 hours
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Oxydation thermique sèche (O2) du silicium de 5nm à 200nm.

Oxydation thermique humide (H2O)  du silicium de 30 nm à 1,6 µm.

Température d'oxydation de 725°C à 1070°C.

Température de redistribution de dopants sous N2 de 700°C à 1070°C.

Silicon Dry oxidation (O2) between 5 nm and 200 nm

Silicon wet oxidation (H2O) between 30 nm and 1,6 µm.

Oxidation temperature from 725°C up to 1070°C.

Doping distribution temperature from 700°C up to 1070°C.



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