Picture of Gravure TMAH (E-ANIS)
Current status:
AVAILABLE
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Responsibles
1st Responsible:
David Bourrier
2nd Responsible:
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Description

Cet équipement permet la gravure chimique de silicium par une solution Tetramethylammonium hydroxide TMAH.

With this equipment, you can do a wet etching of the silicon by Tetramethylammonium hydroxide solution TMAH.

 

Details
Tool name:
Gravure TMAH (E-ANIS)
Area/room:
Electrochimie / electroplating (Bât F)
Category:
Procédés humides / Wet process benches
Manufacturer:
Minaservices
Model:
TMAH
Validated processes informations

Spécifications :

  • Gravure anisotrope
  • Angle de gravure 54.74 °
  • Concentration du bain 25 %
  • Température du bain 90 °C
  • Vitesse de gravure 40 µm/h

Specifications:

  • Anisotropic etching
  • Etching angle 54.74°
  • Bath concentration 25 %
  • Bath temperature 90°C
  • Etching speed 40 µm/h
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