Picture of ALD Fiji MOS COMPATIBLE (T- CVD)
Current status:
AVAILABLE
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Responsibles
1st Responsible:
Pascal Dubreuil
2nd Responsible:
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Description

Bati de dépôt ALD sur Si MOS compatible. croissance de Al2O3, TiO2, TiN, HfO2, ZrO2, HZO.

2 modes de dépôt ALD : ALD thermique et ALD assisté par plasma.

ALD deposition equipment on silicon in MOS compatible mode. Deposit of Al2O3, TiO2, TiN, HfO2, ZrO2, HZO.

Two ALD mode : Thermal and plasma assisted.

Details
Tool name:
ALD Fiji MOS COMPATIBLE (T- CVD)
Area/room:
Traitements thermiques/thermal treament (Bâts F et
Category:
ALD
Manufacturer:
Cambridge Nanotech
Model:
Fiji F200
Validated processes informations

Dépôt d'Al2O3, TiO2, TiN, HfO2, ZrO2, HZO. Epaisseurs de 2 à 50 nm. Températures de dépôts de 20°C à 300°C.

2 modes de dépôt ALD : ALD thermique et ALD assisté par plasma.

Al2O3, TiO2, TiN, HfO2, ZrO2, HZO deposition. 2nm to 50 nm thickness. Deposition temperature between 20°C up to 300°C.

Two ALD mode : Thermal and plasma assisted.

Instructors & Licensed Users

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Tool Modes
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