Picture of Four AET Propre MOS Compatible (T-FOUR)
Current status:
AVAILABLE
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Responsibles
1st Responsible:
Eric Imbernon
2nd Responsible:
Jean Christophe Marrot
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Description

Four d'oxydation 4" pour des plaquettes Si vierges.

Oxidation furnace for 4 inches silicon wafers

Details
Tool name:
Four AET Propre MOS Compatible (T-FOUR)
Area/room:
Traitements thermiques/thermal treament (Bâts F et
Category:
Oxydation
Manufacturer:
AET
Model:
Four d'oxydation
Validated processes informations

Oxydation thermique sèche (O2) du silicium de 5nm à 300nm.

Oxydation thermique humide (H2O)  du silicium de 30 nm à 1,6 µm.

Température d'oxydation de 725°C à 1150°C.

Silicon Dry oxidation (O2) between 5 nm and 300 nm

Silicon wet oxidation (H2O) between 30 nm and 1,6 µm.

Oxidation temperature from 725°C up to 1150°C

Instructors & Licensed Users

Instructors

Licensed Users

Process Lines
test process line
Tool Modes
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