Picture of Wafer bonder SUSS NOMOS (A-INTE)
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Machine permettant le scellement de wafer en verre ou silicium de manière permanente ou non par les techniques de fusion, anodique bonding, thermocompression, eutectique ou utilisant des couches intermédiaires.

Machine permitting the sealing of wafer glass or silicon permanently or not by fusion techniques, anodic bonding, thermocompression, eutectic or using intermediate layers.

Tool name:
Wafer bonder SUSS NOMOS (A-INTE)
Integration/Assemblage (Bât G1/G)
Integration/ Device mounting


  • Substrate Size SB6 Gen2: From pieces up to 150 mm wafers
  • Heater Design: Independent resistive SiN top- and bottom heater with active air cooling
  • Maximum Temperature: up to 550 °C
  • Temperature Uniformity: ± 1.5 %
  • Temperature Repeatability: ± 3 °C
  • Maximum Heating Rate: Up to 30 K/min (with ramping function)
  • Maximum Cooling Rate: Up to 25 K/min
  • Maximum Bond Force: 20 kN
  • Bond Force Repeatability: ± 2 %
  • Minimum Pressure Chamber: 5 x 10-5 mbar after 5 min pump-down
  • Maximum Pressure: 2 bar overpressure (3 bar absolute) 
  • Compressed Air: 6 - 10 bar (CDA)
  • Nitrogen: 7 - 7.5 bar 


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