Picture of Four SI3N46 (T-LPCV)
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Four de dépôt LPCVD de nitrure de silicium stoechiométrique (Si3N4) ou non stoechiométrique (SiNx) 4 et 6".

4 and 6 inches Si3N4 (stochometric) and SiNx (non-stoechiometric) LPCVD deposition furnace.

Tool name:
Four SI3N46 (T-LPCV)
Area/room:
Traitements thermiques/thermal treament (Bâts F et
Category:
LPCVD
Manufacturer:
Centrotherm
Model:
Centronic E1550HT
Max booking time, day:
8 hours
Max booking time, night:
8 hours
No. of future bookings:

Dépôt de Si3N4 à partir de NH3 et SiH2Cl2 à 770°C. Epaisseur de 10 nm à 120 nm.

Dépôt de SiNx à partir de NH3 et SiH2Cl2 à 770°C. Epaisseur de 15 nm à 1 µm.

Si3N4 deposition from NH3 and SiH2Cl2 at 770°C. Thickness between 10 nm and 120 nm.

SiNx deposition from NH3 and SiH2Cl2 at 770°C. Thickness betwenn 15 nm et 1 µm.

 

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