Picture of Four OXYBORE6 (T-OXYD)
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Four d'oxydation et redistribution 4 et 6 pouces pour plaquettes dopées P

Oxidation and redistribution furnace for P-doped 4 and 6 inches wafers

Tool name:
Four OXYBORE6 (T-OXYD)
Area/room:
Traitements thermiques/thermal treament (Bâts F et
Category:
Oxydation
Manufacturer:
Centrotherm
Model:
Centronic E1550HT
Max booking time, day:
12 hours
Max booking time, night:
12 hours
No. of future bookings:

Oxydation thermique sèche (O2) du silicium de 5nm à 200nm.

Oxydation thermique humide (H2O)  du silicium de 30 nm à 2,4 µm.

Température d'oxydation de 725°C à 1150°C.

Redistribution de dopants sous N2 de 700°C à 1150°C.

Silicon Dry oxidation (O2) between 5 nm and 200 nm

Silicon wet oxidation (H2O) between 30 nm and 2,4 µm.

Oxidation temperature from 725°C up to 1150°C.

Doping distribution temperature from 700°C up to 1150°C.

 

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