Picture of Four OXYPHOS6 (T-OXYD)
Current status:
AVAILABLE
Book | Log
Show/Collapse all

1st Responsible:
2nd Responsible:
You must be logged in to view files.

Four d'oxydation et de redistribution 4 et 6 pouces pour plaquettes dopées N.

Oxidation and redstribution furnace 4 and 6 inches for N-doped wafers.

Tool name:
Four OXYPHOS6 (T-OXYD)
Area/room:
Traitements thermiques/thermal treament (Bâts F et
Category:
Oxydation
Manufacturer:
Centrotherm
Model:
Centronic E1550HT
Max booking time, day:
10 hours
Max booking time, night:
10 hours
No. of future bookings:

Oxydation thermique sèche (O2) du silicium de 5nm à 200nm.

Oxydation thermique humide (H2O)  du silicium de 30 nm à 1,6 µm.

Température d'oxydation de 725°C à 1070°C.

Température de redistribution de dopants sous N2 de 700°C à 1070°C.

Silicon Dry oxidation (O2) between 5 nm and 200 nm

Silicon wet oxidation (H2O) between 30 nm and 1,6 µm.

Oxidation temperature from 725°C up to 1070°C.

Doping distribution temperature from 700°C up to 1070°C.

 

Instructors

Licensed Users

You must be logged in to view tool modes.