Picture of Four Tempress Si-poly (T-LPCV)
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Four de dépôt LPCVD de Si-poly et Si-poly dopé Bore pour croissance de nanofils.

Si-poly and boron-doped Si-poly LPCVD depostion furnace for silicon nanowires growth

Tool name:
Four Tempress Si-poly (T-LPCV)
Area/room:
Traitements thermiques/thermal treament (Bâts F et
Category:
LPCVD
Manufacturer:
Tempress
Model:
Dépot LPCVD
Max booking time, day:
8 hours
Max booking time, night:
hours
No. of future bookings:

Dépôt de Si-poly à partir de silane (SiH4) à 605°C et de Si-poly dopé Bore à partir de silane et BCl3 à 605°C. Epaisseur de 100 nm à 500 nm.

Si-poly deposition from SiH4 at 605°C and boron-doped Si-poly deposition from SiH4 and BCl3 at 605°C. Thickness between 100 nm and 500 nm.

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