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Bati de dépôt ALD sur Si MOS compatible. croissance de Al2O3, ZnO.


ALD deposition equipment on silicon in MOS compatible mode. Deposit of Al2O3, ZnO.

Tool name:
ALD MOS (T-CVD)
Area/room:
Traitements thermiques/thermal treament (B√Ęts F et
Category:
ALD
Manufacturer:
Cambridge Nanotech
Model:
Fiji F200
Max booking time, day:
8 hours
Max booking time, night:
0 hours
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Dépôt d'Al2O3 et ZnO. Epaisseurs de 2 à 50 nm. Températures de dépôts de 20°C à 300°C.


Al2O3 an ZnO deposition. 2nm to 50 nm thickness. Deposition temperature between 20°C up to 300°C.

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