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Bati de dépôt PECVD basse température de Si amorphe, SiO2 et Si3N4.

Low temperature PECVD equipment of amorphous Si, SiO2 and Si3N4.

Tool name:
ICPECVD (T-PECV)
Area/room:
Traitements thermiques/thermal treament (Bâts F et
Category:
PECVD
Manufacturer:
Oxford
Model:
Plasmalab 100 - HDPECVD
Max booking time, day:
8 hours
Max booking time, night:
8 hours
No. of future bookings:

Dépôt de SiO2, Si3N4, SiNx, a-Si, SiOx, SiON. Epaisseurs variant de 10 nm à 500 nm. Température de dépôt: 100°C.

Gaz précurseurs: N2, NH3, N2O, SiH4, O2, SF6 (nettoyage de la chambre).

Deposition of SiO2, Si3N4, SiNx, a-Si, SiOx, SiON. Thickness between 10 nm and 500 nm. Depostion temperature: 100°C.

Precursor gases: N2, NH3, N2O, SiH4, O2, SF6 (chamber cleaning)

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