Picture of PECVD 100 ApSy (T-CVD)
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Bati de dépôt PECVD de Si amorphe, SiO2 et Si3N4 à 200°C ou à 300°C


PECVD equipment for amorphous Si, SiO2 and Si3N4 at 200°C or 300°C.

Tool name:
PECVD 100 ApSy (T-CVD)
Area/room:
Traitements thermiques/thermal treament (B√Ęts F et
Category:
PECVD
Manufacturer:
ApSy
Model:
Multiplex CVD
Max booking time, day:
8 hours
Max booking time, night:
0 hours
No. of future bookings:

Il existe 2 plateaux

plateau 1 wafer : uniformity<5%       ou         plateau 3 wafers : uniformité >5% et <15%

recette générique :

SiO2 BF (380kHz) à 300°C/250°C, 54 SiH4

SiO2 HF (13.56MHz) à 300°C/250°C, 10 SiH4

Si3N4 BF (380kHz) à 300°C/250°C, 21 SiH4

Si3N4 HF (13.56MHz) à 300°C/250°C, 18 SiH4

SiOxNy BF (380kHz) à 200°C/200°C


 
There are 2 wafers carriers
carrier for 1 wafer: uniformity <5% or carrier for 3 wafers: uniformity> 5% and <15%

generic recipe:

SiO2 BF (380kHz) à 300°C/250°C, 54 SiH4

SiO2 HF (13.56MHz) à 300°C/250°C, 10 SiH4

Si3N4 BF (380kHz) à 300°C/250°C, 21 SiH4

Si3N4 HF (13.56MHz) à 300°C/250°C, 18 SiH4

SiOxNy BF (380kHz) à 200°C/200°C

 

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