Picture of Four AET Reve (T- CVD)
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Responsibles
1st Responsible:
scheid emmanuel
2nd Responsible:
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Description

Réacteur vertical de dépôt LPCVD de Si-poly dopé Bore.

Vertical LPCVD furnace for boron-doped Si-poly

Details
Tool name:
Four AET Reve (T- CVD)
Area/room:
Traitements thermiques/thermal treament (Bâts F et
Category:
LPCVD
Manufacturer:
AET
Model:
SEP - 28486
Validated processes informations

Dépôt de Si-poly fortement dopé  Bore à partir de silane (SiH4) et Trichlorure de Bore (BCl3). Epaisseurs de dépôt de 1µm à 8µm. Température de dépôt: 490°C. Vitesse dépôt >30nm/mn.

Boron-doped Si-poly deposition from SiH4 and BCl3. Thickness between 1µm to 8µm. Deposit temperature: 490°C. Rate deposition >30nm/mn

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