Picture of Four AET Bore (T-OXYD)
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Four d'oxydation et redistribution 4" pour plaquettes dopées P

Oxidation and redistribution furnace for P-doped 4 inches silicon wafers

Tool name:
Four AET Bore (T-OXYD)
Area/room:
Traitements thermiques/thermal treament (Bâts F et
Category:
Oxydation
Manufacturer:
AET
Model:
Four d'oxydation
Max booking time, day:
10 hours
Max booking time, night:
10 hours
No. of future bookings:

Oxydation thermique sèche (O2) du silicium de 5nm à 300nm.

Oxydation thermique humide (H2O)  du silicium de 30 nm à 1,6 µm.

Température d'oxydation de 725°C à 1150°C.

Température de recuit de 700°C à 1150°C.

Silicon Dry oxidation (O2) between 5 nm and 300 nm

Silicon wet oxidation (H2O) between 30 nm and 1,6 µm.

Oxidation temperature from 725°C up to 1150°C

Annealing temperature from 700°C up to 1150°C

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