Picture of Four AET Propre MOS Compatible (T-FOUR)
Current status:
AVAILABLE
Book | Log
Show/Collapse all

1st Responsible:
2nd Responsible:
You must be logged in to view files.

Four d'oxydation 4" pour des plaquettes Si vierges.

Oxidation furnace for 4 inches silicon wafers

Tool name:
Four AET Propre MOS Compatible (T-FOUR)
Area/room:
Traitements thermiques/thermal treament (Bâts F et
Category:
Oxydation
Manufacturer:
AET
Model:
Four d'oxydation

Oxydation thermique sèche (O2) du silicium de 5nm à 300nm.

Oxydation thermique humide (H2O)  du silicium de 30 nm à 1,6 µm.

Température d'oxydation de 725°C à 1150°C.

Silicon Dry oxidation (O2) between 5 nm and 300 nm

Silicon wet oxidation (H2O) between 30 nm and 1,6 µm.

Oxidation temperature from 725°C up to 1150°C

Instructors

Licensed Users

test process line
You must be logged in to view tool modes.