Picture of Four OXYNIT6 (T-LPCV)
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Four de dépôt LPCVD d'oxynitrure de Silicium (SiOxNy) et de SiO2.
 

LPCVD furnace for SiOxNy and SiO2 deposition.

Tool name:
Four OXYNIT6 (T-LPCV)
Area/room:
Traitements thermiques/thermal treament (Bâts F et
Category:
LPCVD
Manufacturer:
Centrotherm
Model:
Centronic E1550HT
Max booking time, day:
150 hours
Max booking time, night:
0 hours
No. of future bookings:

Dépôt de SiOxNy à partir de N2O, NH3 et SiH2Cl2 à 850°C. Epaisseur de 100 nm à 1 µm. Vitesse de dépôt: 8nm/mn. Contrainte: 50 +/- 20MPa.

Dépôt de SiO2 à partir de N2O et SiH2Cl2 à 850 °C.

SiOxNy deposition from N2O, NH3 and SiH2Cl2 at 850°C. Thickness betwenn 100 nm and 1 µm. Rate deposition: 8nm/mn. Stress: 50 +/- 20MPa.

SiO2 deposition from N2O and SiH2Cl2 at 850 °C.

 

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