Picture of TEPLA plasma O2 (G-PLAS)
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Cet équipement permet de réaliser, par plasma continu :
- Nettoyage de wafers avant tout procédé (ex : avant dépôt de résine).
- Délaquage de résines.
- Traitement de surface (hydrophile) des matériaux.

Chambre : cylindre en quartz (diamètre = 245mm ; profondeur = 380mm).
Source micro-onde : fréquence plasma = 2.45GHz ; puissance plasma = 60W à 1000W.
Température procédé : 20°C à 150°C.
Gaz : gaz1 = O2 ; gaz2 = CF4 ; gaz3 = SF6.
Vide limite (avant injection des gaz) : 0.2 à 0.4mb.
Pression de travail : ≈1.5mb
Puissance = 60W à 800W
Portes substrats pour des wafers 6’’, 4’’, et petits échantillons.

english version (2018) :
This equipment makes it possible to carry out, by continuous plasma:
- Cleaning of wafers before any process (ex: before resist deposition).
- Stripping of resists.
- Surface treatment (hydrophilic) of materials.
Chamber: quartz cylinder (diameter = 245mm, depth = 380mm).
Microwave source: plasma frequency = 2.45GHz; plasma power = 60W to 1000W.
Process temperature: 20 ° C to 150 ° C.
Gas: gas1 = O2; gas2 = CF4; gas3 = SF6.
Limit vacuum (before gas injection): 0.2 to 0.4mb.
Working pressure: ≈1.5mb
Power = 60W to 800W
Substrate carriers for 6 '', 4 '' wafers, and small samples.
Tool name:
TEPLA plasma O2 (G-PLAS)
Area/room:
Gravure plasma/plasma etching (Bât F)
Category:
Gravure plasma / Plasma etching
Manufacturer:
TEPLA
Model:
300 semi-auto
Max booking time, day:
2 hours
Max booking time, night:
2 hours
No. of future bookings:

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